Mitsubishi Power IPM PM30CNA060

Product Description

Mitsubishi power IPM PM30CNA060 

Product Description

1. Igbt Is A Functional Integration Of Power Mosfet And Bjt Devices In Monolithic Form
2. Igbt Combines The Best Attributes Of Both To Achieve Optimal Device Characteristics. Each Module Consists Of Two Igbt In A Half-Bridge Configuration With Each Transistor Having A Reverse-Connected Super-Fast Recovery Free-Wheel Diode.
3. All Components And Interconnects Are Isolated From The Heat Sinking Base Plate,Offering Simplified System Assembly.

Feature   

1. Square Rbsoa
2. Low Saturation Voltage
3. Over Current Limiting Function  (3 Times Rated Current)
4. Igbt Is Three-Terminal Power Semiconductor Device
5. High Frequency Operation

Application   

1. Ac Drive Invert
2. Control
3. Ups, Uninterruptible Power Supply
4. Welding Power Supplies

Mainly Products

We Supply World Wide Famous Brand Electronic Components. Include:

The Products Mainly Include Controlled Silicon, Frd, Bridge Rectifier, Igbt Absorption Capacitor, Pfc Capacitor, Aluminum Electrolytic Capacitor, Sensor, Plc, Magnetic, Balls, Axial Fan, Dc/Dc Power Module Series Which Are Made In American Vicor, Astec, Lucent, Tyco, Japanese Lambda, Cosel, Tdk..

Packing & shipping

1. We will ship the items within 3 working days after the payment is reached.
2. All the goods will be tested before shipment.
3. Packing in professional anti-static bag.
4. We can ship to you by DHL/TNT/EMS/FedEx.

Why choose us?

1. We keep more than 10 thousands Transistors in warehouse, it could cut lead time of most items.
2. Customer service in 1-4 hours.
3. Experienced technical support team.
4. 90 days warranty for all the goods from us.
5. Many supplier with us, we could help you to get any components which is difficult to get.